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High Purity Gallium Sulfide Ga2S3 Powder CAS 12042-22-5, 99.99% | Lemondedudroit

Gallium sulfuride is an inorganic compound and sulfide. The chemical formula for this is Ga2S3. It is slowly soluble when dissolved in cold water. However, it can be easily dissolved in concentrated alkali to make gallate.
Particle Size: -80mesh and -100mesh

Purity: 99.99%

Gallium Sulfide, Ga2S3 powder:

Gallium (III) sulfide Ga2S3

Is a combination of

Sulfur and Gallium

A semiconductor that has both electron and photon elements. In moist air, ballium sulfuride (III), is slowly decomposed and gives off hydrogen sulfide. It can also be used to make sulfate. Gallium titrates or thiolate acid sodium salts can be formed from a strong base.


The temperature at which the non-chemical measuring sulfuride was heated, Ga4SX (4.8), did not affect the magnitude of this effect.

Gallium sulfide Ga2S3

It has four polymorphs. Alpha is yellow. It is connected to the position of four facets in Zns and Zns. This crystal form is similar to that of the zinc mixture (g-flared) If you are interested in purchasing Gallium Sulfide ga2S3 powder bulk, please send us an inquiry.

High Quality 99.99% Semiconductor Materials Ga2S3 Prices Gallium Sulfide

Gallium Sulfide Certificate Analysis

Purity Cu Ni Zn Ca Fe Cr Co Na Mn
Article 99.99% <=5ppm <=5ppm <=10ppm <=5ppm <=5ppm <=10ppm <=3ppm <=5ppm <=5ppm <=5ppm

Gallium Sulfide: Ga2S3

Gallium Sulfide property white solid

Gallium Sulfide density: 3.46-3.65g/cm3

Gallium Sulfide melting point: 1090-1255

Gallium Sulfide uses: semiconductor industry, copper indium gallium sulfur thin-film solar cells

What is Sulfide Gallium Sulfide Powder ?

Ga2S3 was heated using H2S flow at high heat (950°C), and flow in a high temp (950°C) to pass through high temperatures (950°C) in the stream with high temperature (1,950°C). By reacting with a white solid or at high temperatures, the element reaction was achieved.

This can be made by solid-state reactions using Na2 or GaCl3.

Gallium Sulfide Ga2S3 powder:

A group of semiconductors that includes the sulfide (Ga2S3), which is a broad semiconductor has an intriguing characteristic for infrared or nonlinear optics. Ga2S3 materials are highly passivated using various semiconductor surface to improve their electrical and optical characteristics. This involves the formation of a microcrystalline layer with halogen on the semiconductor gap substrate.

By using a thin-clearance semiconductor plate reaction sulfur steam at different temperatures, the Ga2S3 layer was successfully achieved at 450 and 600 degrees Celsius. On the gallium sulfuride layer, the temperature at which the lowest is (400°C) can be observed. The topography of the Ga2S3 layer can be illustrated using scanning electron microscopy as well as atomic force microscopes. These layers have thicknesses ranging from hundreds to just 1-2mm.

Gallium Sulfide Ga2S3 powder Storage Conditions:

Gallium Sulfide Ga2S3 Pulverization performance and usage effects will be affected by any dampening. Gallium Sulfide Ga2S3 Puffer should therefore be stored in vacuum bags and kept dry. The Gallium Sulfide Ga2S3 Poultry cannot be exposed to the air. Ga2S3 powder must be kept away from stress.

Packing & Shipping Gallium Sulfide Gal2S3 Pulp:

We offer many packing options that are dependent on the Gallium Sulfide Powder amount.

Gallium Sulfide Ga2S3 Pulver packing:vacuum packed, 100g to 500g, or 1kg/bag at 25kg/barrel. Or as you request.

Gallium Sulfide Ga2S3 Pulp shipping: Could be sent by sea, air or express as soon after receipt of payment.

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Send us an enquiry if you’re looking for high-quality gallium sulfide granule powder. (

Gallium Sulfide Properties

Other Titles
gallium(III) sulfide, gallium sulphide, gallium trisulfide,

digallium trisulphide (Ga2S3-powder)


Compound Formula

Molecular Weight

Powder White

Melting Point

Boiling Point

3.65-3.77 g/cm3

Solubility of H2O

Exact Weight

Gallium Sulfide Safety & Health Information

Signal word

Hazard Statements

Hazard Codes

Risk Codes

Safety statements

Transport Information
UN 32608 / II

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