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Aluminum nitride or AIN, is a covalent compound. It is safe, non-toxic, and non-toxic.
Here are some key characteristics of Aluminum Nitride
AlN is stable up to 2200°C. While strength at room temperatures remains good, its temperature-dependent stability decreases slowly. Because of its low thermal conductivity, it is an excellent thermal shock material. Aluminium nitride resists corrosion, making it a good crucible to make pure iron and aluminumm. The aluminum nitride has the potential to be an electric component. The material promises to deliver promising results as an electrical insulation. It protects gallium arsenide from ionization in annealing by incorporating aluminum nitride. It acts as a catalyst in the transformation of hexagonal nutrides to cubic-boron. It is slow to react with water when it is at room temperature. Aluminium powder is possible in ammonia or nitrogen at 8001000. The powder is easily synthesized. The powder has a white-to-gray blue color. It can be achieved by using the Al2O3C/N2 system at 16001750. It is white in color. Powder was produced using the vapor phases reactions of ammonia and aluminum chloride. It can also be done using AlCl3H3’s vapor-phase coat technique.
|Aluminum Nitride Properties|
|Other Titles||Aluminium nitride|
|Appearance||From white powder, to pale powder|
|Melting Point||2200 degC|
|Boiling Point||2517 degC (dec.)|
|Density||2.9% to 3.3g/cm3.|
|Electrical Resistance||10-12 O-m 10x|
|Poissons’ rate||0.21- 0.31|
|Particular Heating||780 J/kg-K|
|Hydro Conductivity||80 to 200 Watts/m|
|Thermal Expansion||4.2 to 5.4 um/mK|
|Young’s Modular||330 GPa|
Research is currently focusing on the creation of a light-emitting semiconductor device. It could either be an alloy aluminium galium trioxide or gallium nutride. It emits ultraviolet radiation, with wavelengths ranging from 250 to 250 nanometers. The 1 May 2006 report stated that an inefficient diode could produce light as high as 210nm. UV radiation reflectance determines the energy gap in an aluminum-nitride singlecrystal. Its measured value was 6.2 electronvolts. According to the theory, this energy gap could allow wavelengths up to 200 nanometers. However, commercialization presents many difficulties. Optoelectronics utilizes aluminum nitride on optical layers and electronic substrates. This is used for military purposes.
Aluminum Nitride has the properties to make epitaxial stretching Crystals of aluminum Nitride that can be used for surface acoustic-wave detectors. These thin films are made on silicon wafers.
For high-temperature parts and heat exchanger materials, use aluminum nitride -clays.
The ceramic is useful for making crucibles, casting materials, and molten Al, Cu, Ag and Pb with aluminum-nitride Clays. This ceramic resists iron and aluminium corrosion.
Aluminum Niitride is the principal supplier
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