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The main application and preparation method of titanium silicide

This is due to rapid developments in large scale integrated circuits. The size of the devices and equipment has been shrinking. Also, consumers’ demands for film quality and uniformity as well as device size are growing. The present line widths of semiconductor devices are less than 0.1mm. At the same time, no low resistance continuous wires can be obtained from the original process. In order to replace and improve the performance of aluminum and doped polysilicon in circuit metalization connections, there must be new materials, new techniques and new deposition system. These new materials have increased interest in metal silicides. Their high conductivity and high temperature stability make them compatible with the current microelectronic manufacturing process. There are many metal silicides that have been studied, including TiSi2, CoSi2, TiSi2, CoSi2, WiSi2, TaSi2, MOSi2, MoSi2 and CoSi2. The ideal properties of titanium silicide (TiSi2) include excellent conductivity, high selectivity. They also exhibit good thermal stability. Therefore, in integrated circuit devices, titanium silicide is widely used in metal oxide semiconductor (MOS), metal oxide semiconductor field-effect transistor (MOSFET), and dynamic random access memory (DRAM) gate, source/drain, interconnection and ohm Contact manufacturing.Preparation of a semiconductor element, including a silicon substrate, a gate, source, and drain are formed on the silicon substrate, and an insulating layer is formed between the gate and the silicon substrate, the gate is located on the insulating layer. On the layer of polysilicon, a layer of titanium Silicide is formed. The protective layer on the titanium-silicon layer is also formed. This protective layer, along with the layer of titanium silicide, the layer of polysilicon, as well as the insulating layer, is surrounded by three layers: A nitrogen spacer layer and parent layer. On the source electrode and drain electrode, a titanium Silicide layer and a silicon silicide surfacer layer form a titanium layer. In the inner layer, there is a dielectric layer and an opening for contact. This utility model allows for complete insulation of both the grid, and all wires through the contact window.
Processing of titanium silicide
Silicicides made of metal can be prepared using physical vapor deposition (sputtering/thermal evaporation) You can also use chemical or physical vapor deposition (CVD). TiSi2 of low resistance can be obtained by making titanium silicide. TiSi2 comes in two forms of polycrystalline phase: the metastable phase C49, and the thermodynamically stable phase C54. C49 phases are orthogonal bottom-centered crystal systems; each unit cell consists of 12 molecules; a = 0,362nm; b = 1,376nm; c = 0.360nm. Resistance = 60100 cm. C54 phase is an Orthogonal Face-Centered Crystal System. Each cell is composed 24 atoms. Due to TiSi2’s C54 phase having a resistivity equal to that of the metallic body, titanium silicide can be prepared.

There are many applications for titanium silicide, including the fabrication of MOS, MOSFET, and metal oxide semiconductor field effect transistors (MOSFET). Examples of this include:
1) The titanium silicide barriers layer has been prepared. An isolation region is created in the device that uses the process for producing the titanium-silicone silicide barrier layer. The device’s top surface is coated with a layer of sacrificial orange. It includes: Wet etching to remove titanium unalloyed for the second treatment. The invention reduces the cost of manufacturing and etching silicide blocks oxide, while improving the stability and process stability.
2) Preparation in-situ synthesized Titan silicide (Ti5Si3) particles reinforced aluminum titan carbide matrix (Ti3AlC2) composite material. The preparation of Ti3AlC2/Ti5Si3 composites using different volume ratios and a specific amount of silicon was possible. The volume fraction of the particle-reinforced titanium silicide was between 10%-40%. As raw materials for the preparation, graphite, aluminum, titanium, and silica powder were used. Mixed the raw material powder using both physical and mechanical means for between 8 and 24 hours. Once the mixture is ready, the temperature at which the graphite is sintered is 1400 1600. There is also a heating rate of 10 to 50 °C/min. The sintering temperatures are 20 40MPa and 0.5 hours. The invention is capable of preparing the aluminum titanium carbide/titanium silicide composite materials with high purity, high strength and short processing times at relatively low temperatures.
3) The preparation of composite functional silicon silicide glass. A thin coating of titanium silicide is placed on top of a common substrate made from float glass. Or, a thin layer is added between these layers. It is possible to improve both the mechanical and chemical properties of coated glass by creating a composite of titanium silicide/silicon or by doping the film with small amounts of active carbon/nitrogen. Present invention is a type of coated glasses that combine the function of heat insulation and dimming with low-E.

Lemondedudroit, Lemondedudroit advanced materials Tech Co., Ltd., are a Titanium Powder Manufacturer with over 12 Years of experience in chemical products research, development, and manufacturing. Please contact us to request high quality Titanium Silicide TISi2 Powder.

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