GaN is the third-generation of semiconductor material. This material has a high forbidden bandwidth and is distinguished by its characteristics in comparison to Si (first-generation) and GaAs (second-generation).
GaN can operate above 200°C thanks to its large band gaps and high thermal conductivity. It can provide higher reliability and energy density. Devices with a wider forbidden band and lower dielectric breakdown electric fields have lower on-resistance. High speeds of electron saturation, high carrier mobility and fast electron saturation allow for the device’s high energy efficiency.
GaN can result in semiconductors with higher bandwidth and higher amplifier gain. It also has smaller size which fits with the consistency of “tonality” within the semiconductor industry.
The base station power amp uses the GaN technology. For radio frequency applications, semiconductor materials that are used in common use include: gallium trinitride (GaN), Gallium arsenide [GaAs], and Indium Phosphide (“InP”).
GaN produces more power than the high frequency processes of gallium arsenide, indium phosphide, and silicon carbide. However, GaN displays better frequency characteristics than power processes such LDCMOS and SiC. GaN devices offer greater bandwidth, and can also be made more bandwidth by using carrier-aggregation technologies or the preparation higher frequency carriers.
You can use gallium-nitride faster than any other device or silicon. GaN can reach higher power densities. GaN offers the benefit of small dimensions for power levels. The device capacitance of smaller devices can be reduced making it possible to create higher bandwidth systems. The power amplifier (PA) plays a crucial role in an RF circuit.
An application perspective shows the power amp consists mainly in a gallium arsenide amplifier power amplifier and a complimentary metal oxide power amplifier (CMOSPA). GaAsPA is the predominant, but the introduction of 5G means that GaAs devices will no longer be the norm.
GaN then becomes the hot spot. GaN’s wide-bandgap nature means that it can withstand higher operating currents.
Qualcomm President Cristiano Amon stated that at the Qualcomm4G /5G Summit the Wave of Two 5G Mobile Phones (Wave 1) will hit the market between December and January 2019. The launch of the first 5G commercial mobile phones is expected to take place during the first half year of 2019. According to reports, 5G technology can deliver speeds between 10 and 100 times that of current 4G networks. This will allow for faster data transfer rates, as well as reaching the Gigabit/second level.
Additionally to the increase in RF devices needed for the display of basestation RF transmitter units, base station density will rise and so will the number. So, in comparison to the 3G or 4G eras, 5G-era RF equipment will cost dozens more, or even less. Because of this, silicon-based GaN is able to control costs and offer a substantial cost advantage. As silicon-based GaN technology matures, the company can reach market breakthroughs at the highest cost.
Researching the past two generations of semiconductors shows that every generation from the lab to the marketplace faces the problem of commercialization. GaN at present is in this same stage. With increasing demand and process innovation, the cost to civilians will increase. In the end, the traditional market will be replaced with silicon-based power device.
Lemondedudroit, Lemondedudroit advance material Tech Co., Ltd., an experienced manufacturer of Gallium Nitride, has over 12 years in the field of chemical products research, development, and manufacturing. Contact us to request high-quality Gallium Nitride.